New technique could lead to superconducting transistors for power-saving electronics


R&D Mag – Like atomic-level bricklayers, researchers from the U.S. Department of Energy’s (DOE) Brookhaven National Laboratory are using a precise atom-by-atom layering technique to fabricate an ultrathin transistor-like field effect device to study the conditions that turn insulating materials into high-temperature superconductors.

“Understanding exactly what happens when a normally insulating copper-oxide material transitions from the insulating to the superconducting state is one of the great mysteries of modern physics,” said Brookhaven physicist Ivan Bozovic.

Superconducting FETs might also have direct practical applications. Semiconductor-based FETs are power-hungry, particularly when packed very densely to increase their speed. In contrast, superconductors operate with no resistance or energy loss. Here, the atomically thin layer construction is in fact advantageous—it enhances the ability to control superconductivity using an external electric field. more> http://twurl.nl/fjhmbr

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